Miyake, M. and Scott, J. F. and Lou, X. J. and Morrison, F. D. and Nonaka, T. and Motoyama, S. and Tatsuta, T. and Tsuji, O. (2008) Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing. Journal of Applied Physics, 104 (6). 064112-7. DOI https://doi.org/10.1063/1.2981197
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Abstract
We report conformal deposition of both RuO2 electrodes and PbZrxTi1−xO3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225 °C. After electroding, we deposited Pb(Zr,Ti)O3 thin films and nanotubes using the same apparatus with remanent polarization of ~15 µC/cm2. The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13±2 pF, with a breakdown voltage of 11.3±0.2 V and dielectric constant epsilon=166±30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical
Item Type: | Article |
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Additional Information: | Samco, cml |
Uncontrolled Keywords: | 08AREP; IA57; |
Subjects: | 03 - Mineral Sciences |
Divisions: | 03 - Mineral Sciences |
Journal or Publication Title: | Journal of Applied Physics |
Volume: | 104 |
Page Range: | 064112-7 |
Identification Number: | https://doi.org/10.1063/1.2981197 |
Depositing User: | Sarah Humbert |
Date Deposited: | 30 May 2009 11:48 |
Last Modified: | 23 Jul 2013 09:55 |
URI: | http://eprints.esc.cam.ac.uk/id/eprint/1044 |
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