Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing

Miyake, M. and Scott, J. F. and Lou, X. J. and Morrison, F. D. and Nonaka, T. and Motoyama, S. and Tatsuta, T. and Tsuji, O. (2008) Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing. Journal of Applied Physics, 104 (6). 064112-7. DOI 10.1063/1.2981197

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Abstract

We report conformal deposition of both RuO2 electrodes and PbZrxTi1−xO3 (PZT) capacitors in submicron Si trenches through the same in situ liquid source mist processing. The step coverage for the RuO2 electrodes is 75% at 225 °C. After electroding, we deposited Pb(Zr,Ti)O3 thin films and nanotubes using the same apparatus with remanent polarization of ~15 µC/cm2. The step coverage was 59% on the sidewall and 79% on the bottom wall. Electrical testing showed charge storage (capacitance/trench) was 13±2 pF, with a breakdown voltage of 11.3±0.2 V and dielectric constant epsilon=166±30. This shows that a single inexpensive processing can produce fully electroded dynamic random access memory trenched capacitors with high aspect ratios and commercial electrical

Item Type: Article
Additional Information: Samco, cml
Uncontrolled Keywords: 08AREP; IA57;
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Journal of Applied Physics
Volume: 104
Page Range: 064112-7
Identification Number: 10.1063/1.2981197
Depositing User: Sarah Humbert
Date Deposited: 30 May 2009 11:48
Last Modified: 23 Jul 2013 09:55
URI: http://eprints.esc.cam.ac.uk/id/eprint/1044

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