Strain gradients in epitaxial ferroelectrics

Catalan, G. and Noheda, B. and Sinnamon, L. J. and McAneney, J. and Gregg, J. M. (2005) Strain gradients in epitaxial ferroelectrics. Physical Review B, 72 (2). DOI 10.1103/PhysRevB.72.020102

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Abstract

X-ray analysis of ferroelectric thin layers of Ba1∕2Sr1∕2TiO3 with different thicknesses reveals the presence of strain gradients across the films and allows us to propose a functional form for the internal strain profile. We use this to calculate the influence of strain gradient, through flexoelectric coupling, on the degradation of the ferroelectric properties of films with decreasing thickness, in excellent agreement with the observed behavior. This paper shows that strain relaxation can lead to smooth, continuous gradients across hundreds of nanometers, and it highlights the pressing need to avoid such strain gradients in order to obtain ferroelectric films with bulklike properties.

Item Type: Article
Uncontrolled Keywords: NIL AREP 2005 P IA49
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Physical Review B
Volume: 72
Identification Number: 10.1103/PhysRevB.72.020102
Depositing User: Sarah Humbert
Date Deposited: 29 Jul 2011 10:56
Last Modified: 23 Jul 2013 09:58
URI: http://eprints.esc.cam.ac.uk/id/eprint/1597

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