Ultrathin organic transistors on oxide surfaces

Daraktchiev, M. and von Muhlenen, A. and Nuesch, F. and Schaer, M. and Brinkmann, M. and Bussac, M. N. and Zuppiroli, L. (2005) Ultrathin organic transistors on oxide surfaces. New Journal of Physics, 7 (133). ISSN 1367-2630 DOI 10.1088/1367-2630/7/1/133

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Abstract

We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000Acm−2 at a gate voltage of –60V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance.

Item Type: Article
Uncontrolled Keywords: NIL AREP
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: New Journal of Physics
Volume: 7
Identification Number: 10.1088/1367-2630/7/1/133
Depositing User: Sarah Humbert
Date Deposited: 09 Jun 2011 14:42
Last Modified: 23 Jul 2013 09:58
URI: http://eprints.esc.cam.ac.uk/id/eprint/1618

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