Physics of thin-film ferroelectric oxides

Dawber, M. and Rabe, K. M. and Scott, J. F. (2005) Physics of thin-film ferroelectric oxides. Reviews of Modern Physics, 77 (4). pp. 1083-1130. DOI https://doi.org/10.1103/RevModPhys.77.1083

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Abstract

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

Item Type:	Article
Uncontrolled Keywords:	NIL AREP 2005 P
Subjects:	03 - Mineral Sciences
Divisions:	03 - Mineral Sciences
Journal or Publication Title:	Reviews of Modern Physics
Volume:	77
Page Range:	pp. 1083-1130
Identification Number:	https://doi.org/10.1103/RevModPhys.77.1083
Depositing User:	Sarah Humbert
Date Deposited:	09 Jun 2011 15:06
Last Modified:	23 Jul 2013 09:58
URI:	http://eprints.esc.cam.ac.uk/id/eprint/1619

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