Growth of highly resistive BiMnO3 films

Eerenstein, W. and Morrison, F. D. and Scott, J. F. and Mathur, N. D. (2005) Growth of highly resistive BiMnO3 films. Applied Physics Letters, 87. p. 10. DOI 10.1063/1.2039988

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Abstract

BiMnO3 (010) films (100 nm) were grown epitaxially on SrTiO3 (001) and 0.2 at. % Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. The microstructure, electrical, and magnetic properties, and indeed the formation of the correct phase, were found to be very sensitive to growth parameters. This optimization has resulted in highly resistive BiMnO3 films and thus enabled room-temperature dielectric measurements: We obtained a resistivity of 5×107 Ω cm, and an effective (i.e. thickness dependent) dielectric constant of 1400. These findings pave the way for magnetoelectric measurements and further optimization.

Item Type: Article
Uncontrolled Keywords: 2005 AREP 2005 P IA49
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Applied Physics Letters
Volume: 87
Page Range: p. 10
Identification Number: 10.1063/1.2039988
Depositing User: Sarah Humbert
Date Deposited: 27 May 2011 15:35
Last Modified: 23 Jul 2013 09:58
URI: http://eprints.esc.cam.ac.uk/id/eprint/1636

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