Switching kinetics in nanoferroelectrics

Jung, D. J. and Kim, K. and Scott, J. F. (2005) Switching kinetics in nanoferroelectrics. Journal of Physics-Condensed Matter, 17 (30). pp. 4843-4852. DOI 10.1088/0953-8984/17/30/010

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Abstract

We have measured the switching in ferroelectric capacitors of lead zirconate titanate (PZT) over three orders of magnitude in lateral area, from A = 166 to 0.19 µm2 (the latter being the size of the smallest ferroelectric random access memory (FRAM) cells in production), and over three orders of magnitude in ramp rate of applied voltage (d E(t)/d t = 107–1010 V cm−1 s−1). In accord with the model of Scott (1998 Ferroelectr. Rev. 1 1), the submicron cells follow a different dependence to the larger cells: for A\gg 1~\micmu {\mathrm {m}}^{2} , the data fit a theory due to Landauer et al (the LYD model), which neglects nucleation; whereas the nanoscale devices satisfy the functional dependence predicted by Pulvari and Kuebler (the PK model), albeit with a modified coefficient. This crossover behaviour has implications for Gbit FRAM device performance at high speed. Fringing field effects measured agree with a simple model from Feynman.

Item Type: Article
Additional Information: Samsung Electronics Co. Ltd;cml
Uncontrolled Keywords: NIL AREP 2005 P
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Journal of Physics-Condensed Matter
Volume: 17
Page Range: pp. 4843-4852
Identification Number: 10.1088/0953-8984/17/30/010
Depositing User: Sarah Humbert
Date Deposited: 03 Mar 2011 15:36
Last Modified: 23 Jul 2013 09:59
URI: http://eprints.esc.cam.ac.uk/id/eprint/1708

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