Miyake, M. and Lou, X. J. and Zhang, M. and Morrison, F. D. and Leedham, T. J. and Tatsuta, T. and Tsuji, O. and Scott, J. F. (2005) High-temperature amorphous Hafnia (HfO2) for microelectronics. Integrated Ferroelectrics, 74 (1). pp. 165-172. DOI 10.1080/10584580500414176Full text not available from this repository.
We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These results are considered in terms of two models: the coordination oligomerism model of Turova and Yanovskaya, and a model of competing surface assembly mechanisms from monomeric precursors; although both are compatible with Raman data on film crystallisation temperatures, DTA/TG results on bulk samples support the competing surface assembly model, as do differing values of surface roughness for the different precursors. Implications for commercial production of hafnia gate oxides capable of withstanding conventional FET front-end processing are emphasised.
|Additional Information:||Samco Inc. cml Epichem Oxides & Nitrides, cml|
|Uncontrolled Keywords:||2006 AREP IA49 IA50 2005 P Samco;cml Epichem Oxides & Nitrides;cml|
|Subjects:||03 - Mineral Sciences|
|Divisions:||03 - Mineral Sciences|
|Journal or Publication Title:||Integrated Ferroelectrics|
|Page Range:||pp. 165-172|
|Depositing User:||Sarah Humbert|
|Date Deposited:||13 Nov 2010 12:30|
|Last Modified:||23 Jul 2013 09:59|
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