High-temperature amorphous Hafnia (HfO2) for microelectronics

Miyake, M. and Lou, X. J. and Zhang, M. and Morrison, F. D. and Leedham, T. J. and Tatsuta, T. and Tsuji, O. and Scott, J. F. (2005) High-temperature amorphous Hafnia (HfO2) for microelectronics. Integrated Ferroelectrics, 74 (1). pp. 165-172. DOI 10.1080/10584580500414176

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Abstract

We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These results are considered in terms of two models: the coordination oligomerism model of Turova and Yanovskaya, and a model of competing surface assembly mechanisms from monomeric precursors; although both are compatible with Raman data on film crystallisation temperatures, DTA/TG results on bulk samples support the competing surface assembly model, as do differing values of surface roughness for the different precursors. Implications for commercial production of hafnia gate oxides capable of withstanding conventional FET front-end processing are emphasised.

Item Type: Article
Additional Information: Samco Inc. cml Epichem Oxides & Nitrides, cml
Uncontrolled Keywords: 2006 AREP IA49 IA50 2005 P Samco;cml Epichem Oxides & Nitrides;cml
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Integrated Ferroelectrics
Volume: 74
Page Range: pp. 165-172
Identification Number: 10.1080/10584580500414176
Depositing User: Sarah Humbert
Date Deposited: 13 Nov 2010 12:30
Last Modified: 23 Jul 2013 09:59
URI: http://eprints.esc.cam.ac.uk/id/eprint/1752

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