Scott, J. F. (2005) [3D] nano-scale ferroelectric devices for memory applications. Ferroelectrics, 314. pp. 207-222. DOI https://doi.org/10.1080/00150190590926490
Full text not available from this repository.Abstract
A description is presented of present efforts to make thin-films for ferroelectric memory devices into truly three-dimensional objects, such as nano-tubes, nano-rods, and nano-ribbons. These may have important applications for DRAM trenched capacitors. A summary of state-of-the-art magnetic RAM (MRAM) and ferroelectric FRAM devices is included.
Item Type: | Article |
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Uncontrolled Keywords: | 2005 AREP 2005 P IA48 |
Subjects: | 03 - Mineral Sciences |
Divisions: | 03 - Mineral Sciences |
Journal or Publication Title: | Ferroelectrics |
Volume: | 314 |
Page Range: | pp. 207-222 |
Identification Number: | https://doi.org/10.1080/00150190590926490 |
Depositing User: | Sarah Humbert |
Date Deposited: | 18 Aug 2010 15:30 |
Last Modified: | 23 Jul 2013 09:59 |
URI: | http://eprints.esc.cam.ac.uk/id/eprint/1814 |
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