Scott, J. F. (2005) [3D] nano-scale ferroelectric devices for memory applications. Ferroelectrics, 314. pp. 207-222. DOI 10.1080/00150190590926490Full text not available from this repository.
A description is presented of present efforts to make thin-films for ferroelectric memory devices into truly three-dimensional objects, such as nano-tubes, nano-rods, and nano-ribbons. These may have important applications for DRAM trenched capacitors. A summary of state-of-the-art magnetic RAM (MRAM) and ferroelectric FRAM devices is included.
|Uncontrolled Keywords:||2005 AREP 2005 P IA48|
|Subjects:||03 - Mineral Sciences|
|Divisions:||03 - Mineral Sciences|
|Journal or Publication Title:||Ferroelectrics|
|Page Range:||pp. 207-222|
|Depositing User:||Sarah Humbert|
|Date Deposited:||18 Aug 2010 15:30|
|Last Modified:||23 Jul 2013 09:59|
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