[3D] nano-scale ferroelectric devices for memory applications.

Scott, J. F. (2005) [3D] nano-scale ferroelectric devices for memory applications. Ferroelectrics, 314. pp. 207-222. DOI https://doi.org/10.1080/00150190590926490

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Abstract

A description is presented of present efforts to make thin-films for ferroelectric memory devices into truly three-dimensional objects, such as nano-tubes, nano-rods, and nano-ribbons. These may have important applications for DRAM trenched capacitors. A summary of state-of-the-art magnetic RAM (MRAM) and ferroelectric FRAM devices is included.

Item Type:	Article
Uncontrolled Keywords:	2005 AREP 2005 P IA48
Subjects:	03 - Mineral Sciences
Divisions:	03 - Mineral Sciences
Journal or Publication Title:	Ferroelectrics
Volume:	314
Page Range:	pp. 207-222
Identification Number:	https://doi.org/10.1080/00150190590926490
Depositing User:	Sarah Humbert
Date Deposited:	18 Aug 2010 15:30
Last Modified:	23 Jul 2013 09:59
URI:	http://eprints.esc.cam.ac.uk/id/eprint/1814

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