New developments on FRAMs: [3D] structures and all-perovskite FETs.

Scott, J. F. (2005) New developments on FRAMs: [3D] structures and all-perovskite FETs. Materials Science and Engineering B - Solid State Materials for Advanced Technology, 120. pp. 6-12. DOI 10.1016/j.mseb.2005.02.047

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Abstract

A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.

Item Type: Article
Uncontrolled Keywords: 2005 AREP 2005 P IA48
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Materials Science and Engineering B - Solid State Materials for Advanced Technology
Volume: 120
Page Range: pp. 6-12
Identification Number: 10.1016/j.mseb.2005.02.047
Depositing User: Sarah Humbert
Date Deposited: 18 Aug 2010 15:44
Last Modified: 23 Jul 2013 09:59
URI: http://eprints.esc.cam.ac.uk/id/eprint/1817

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