Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films.

Wang, S. Y. and Cheng, B. L. and Wang, C. and Redfern, S. A. T. and Dai, S. Y. and Jin, K. J. and Lu, H. B. and Zhou, Y. L. and Chen, Z. H. and Yang, G. Z. (2005) Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films. Journal of Physics D: Applied Physics, 38. pp. 2253-2257. DOI 10.1088/0022-3727/38/13/025

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Abstract

Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO3 (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 ×10−4 and 5.0 ×10−5 versus 3.4 ×10−2 Acm−2 at 450 kV cm−1; 4.0 × 10−4 and 4.0 × 10−5 versus 6.2 × 10−3 Acm−2 at −450 kV cm−1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement.

Item Type:	Article
Uncontrolled Keywords:	2005 AREP 2005 P IA48
Subjects:	03 - Mineral Sciences
Divisions:	03 - Mineral Sciences
Journal or Publication Title:	Journal of Physics D: Applied Physics
Volume:	38
Page Range:	pp. 2253-2257
Identification Number:	10.1088/0022-3727/38/13/025
Depositing User:	Sarah Humbert
Date Deposited:	12 Aug 2010 15:10
Last Modified:	23 Jul 2013 10:00
URI:	http://eprints.esc.cam.ac.uk/id/eprint/1874

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