Wang, S. Y. and Cheng, B. L. and Wang, C. and Redfern, S. A. T. and Dai, S. Y. and Jin, K. J. and Lu, H. B. and Zhou, Y. L. and Chen, Z. H. and Yang, G. Z. (2005) Influence of Ce doping on leakage current in Ba0.5Sr0.5TiO3 films. Journal of Physics D: Applied Physics, 38. pp. 2253-2257. DOI https://doi.org/10.1088/0022-3727/38/13/025
![]() |
PDF
Influence_of_Ce_doping_-_Redfern.pdf Restricted to Registered users only Download (186kB) |
Abstract
Undoped and Ce-doped Ba0.5Sr0.5TiO3 (BST) thin films were prepared by pulsed-laser deposition onto a Nb-doped SrTiO3 (STON) substrate. The Ce concentration, ranging from 0.5 to 1.0 at.%, was found to have a strong influence on the electric properties of films at room temperature. We find that, with a positively biased Pt electrode, the leakage current controlled by BST/STON interface can be described by a space-charge-limited-current model. When the Pt electrode is negatively biased, the leakage current controlled by the BST/Pt interface can be explained by the Schottky emission mechanism. In both cases the Ce-doped BST thin films exhibited a lower leakage current (1.2 ×10−4 and 5.0 ×10−5 versus 3.4 ×10−2 Acm−2 at 450 kV cm−1; 4.0 × 10−4 and 4.0 × 10−5 versus 6.2 × 10−3 Acm−2 at −450 kV cm−1) than undoped BST films. The reduction of the leakage current is ascribed to the effect of acceptor Ce3+ doping, determined by x-ray photoelectron spectroscopy measurement.
Item Type: | Article |
---|---|
Uncontrolled Keywords: | 2005 AREP 2005 P IA48 |
Subjects: | 03 - Mineral Sciences |
Divisions: | 03 - Mineral Sciences |
Journal or Publication Title: | Journal of Physics D: Applied Physics |
Volume: | 38 |
Page Range: | pp. 2253-2257 |
Identification Number: | https://doi.org/10.1088/0022-3727/38/13/025 |
Depositing User: | Sarah Humbert |
Date Deposited: | 12 Aug 2010 15:10 |
Last Modified: | 23 Jul 2013 10:00 |
URI: | http://eprints.esc.cam.ac.uk/id/eprint/1874 |
Actions (login required)
![]() |
View Item |