Toward self-assembled ferroelectric random access memories: hard-wired switching capacitor arrays with almost Tb/in.^2 densities

Evans, P. R. and Zhu, X. and Baxter, P. and McMillen, M. and McPhillips, J. and Morrison, F. D. and Scott, J. F. and Pollard, R. J. and Bowman, R. M. and Gregg, J. M. (2007) Toward self-assembled ferroelectric random access memories: hard-wired switching capacitor arrays with almost Tb/in.^2 densities. Nano Letters, 7. pp. 1134-1137. DOI 10.1021/nl0626028

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Abstract

We report on the successful fabrication of arrays of switchable nanocapacitors made by harnessing the self-assembly of materials. The structures are composed of arrays of 20-40 nm diameter Pt nanowires, spaced 50-100 nm apart, electrodeposited through nanoporous alumina onto a thin film lower electrode on a silicon wafer. A thin film ferroelectric (both barium titanate (BTO) and lead zirconium titanate (PZT)) has been deposited on top of the nanowire array, followed by the deposition of thin film upper electrodes. The PZT nanocapacitors exhibit hysteresis loops with substantial remnant polarizations, while although the switching performance was inferior, the low-field characteristics of the BTO nanocapacitors show dielectric behavior comparable to conventional thin film heterostructures. While registration is not sufficient for commercial RAM production, this is nevertheless an embryonic form of the highest density hard-wired FRAM capacitor array reported to date and compares favorably with atomic force microscopy read-write densities.

Item Type: Article
Uncontrolled Keywords: 2007 AREP 2007 P IA54
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Nano Letters
Volume: 7
Page Range: pp. 1134-1137
Identification Number: 10.1021/nl0626028
Depositing User: Sarah Humbert
Date Deposited: 16 Feb 2009 13:02
Last Modified: 23 Jul 2013 10:06
URI: http://eprints.esc.cam.ac.uk/id/eprint/278

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