Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for \"domain wall memristors\"

Whyte, JR and McQuaid, RGP and Ashcroft, CM and Einsle, J. F. and Canalias, C and Gruverman, A and Gregg, JM (2014) Sequential injection of domain walls into ferroelectrics at different bias voltages: Paving the way for \"domain wall memristors\". Journal of Applied Physics, 116. 066813. ISSN 0021-8979 DOI doi:116/6/10.1063/1.4891347

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Abstract

Simple meso-scale capacitor structures have been made by incorporating thin (∼300 nm) single crystal lamellae of KTiOPO4 (KTP) between two coplanar Pt electrodes. The influence that either patterned protrusions in the electrodes or focused ion beam milled holes in the KTP have on the nucleation of reverse domains during switching was mapped using piezoresponse force microscopy imaging. The objective was to assess whether or not variations in the magnitude of field enhancement at localised ḧot-spots,\" caused by such patterning, could be used to both control the exact locations and bias voltages at which nucleation events occurred. It was found that both the patterning of electrodes and the milling of various hole geometries into the KTP could allow controlled sequential injection of domain wall pairs at different bias voltages; this capability could have implications for the design and operation of domain wall electronic devices, such as memristors, in the future. © 2014 AIP Publishing LLC.

Item Type: Article
Uncontrolled Keywords: NILAREP; IA67;
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Journal of Applied Physics
Volume: 116
Page Range: 066813
Identification Number: doi:116/6/10.1063/1.4891347
Depositing User: Sarah Humbert
Date Deposited: 27 Mar 2015 14:55
Last Modified: 27 Mar 2015 14:55
URI: http://eprints.esc.cam.ac.uk/id/eprint/3259

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