Switching kinetics and fringing field effects of nano-integrated ferroelectrics

Jung, D. J. and Scott, J. F. (2006) Switching kinetics and fringing field effects of nano-integrated ferroelectrics. Ferroelectrics, 334 (1). pp. 285-298. DOI https://doi.org/10.1080/00150190600696030

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We have explored the switching in ferroelectric capacitors of PZT over the range in lateral area, from A > 100 to 0.19 μ m2, and over several orders of magnitude in ramp rate of applied field. We found that the LYD model fits PZT capacitors of size 166 μ m2, and implies an activation field agr of 622 ± 20 kV/cm. However, nano-cell capacitors of areas 0.32 and 0.19 μ m2 conform with the PK theory, in which nucleation and domain movement are both important. Fringing field effects due to mesa-structured capacitors gives the excess capacitance satisfies an empirical correction formula of Δ C/C = L-0.36, particularly as the aspect ratio increases.

Item Type: Article
Uncontrolled Keywords: 2006 AREP 2006 P IA52
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Journal or Publication Title: Ferroelectrics
Volume: 334
Page Range: pp. 285-298
Identification Number: https://doi.org/10.1080/00150190600696030
Depositing User: Sarah Humbert
Date Deposited: 16 Feb 2009 13:02
Last Modified: 23 Jul 2013 10:07
URI: http://eprints.esc.cam.ac.uk/id/eprint/443

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