Jung, D. J. and Scott, J. F. (2006) Switching kinetics and fringing field effects of nano-integrated ferroelectrics. Ferroelectrics, 334 (1). pp. 285-298. DOI 10.1080/00150190600696030Full text not available from this repository.
We have explored the switching in ferroelectric capacitors of PZT over the range in lateral area, from A > 100 to 0.19 μ m2, and over several orders of magnitude in ramp rate of applied field. We found that the LYD model fits PZT capacitors of size 166 μ m2, and implies an activation field agr of 622 ± 20 kV/cm. However, nano-cell capacitors of areas 0.32 and 0.19 μ m2 conform with the PK theory, in which nucleation and domain movement are both important. Fringing field effects due to mesa-structured capacitors gives the excess capacitance satisfies an empirical correction formula of Δ C/C = L-0.36, particularly as the aspect ratio increases.
|Uncontrolled Keywords:||2006 AREP 2006 P IA52|
|Subjects:||03 - Mineral Sciences|
|Divisions:||03 - Mineral Sciences|
|Journal or Publication Title:||Ferroelectrics|
|Page Range:||pp. 285-298|
|Depositing User:||Sarah Humbert|
|Date Deposited:||16 Feb 2009 13:02|
|Last Modified:||23 Jul 2013 10:07|
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