Jung, D. J. and Scott, J. F. (2006) Switching kinetics and fringing field effects of nano-integrated ferroelectrics. Ferroelectrics, 334 (1). pp. 285-298. DOI https://doi.org/10.1080/00150190600696030
Full text not available from this repository.Abstract
We have explored the switching in ferroelectric capacitors of PZT over the range in lateral area, from A > 100 to 0.19 μ m2, and over several orders of magnitude in ramp rate of applied field. We found that the LYD model fits PZT capacitors of size 166 μ m2, and implies an activation field agr of 622 ± 20 kV/cm. However, nano-cell capacitors of areas 0.32 and 0.19 μ m2 conform with the PK theory, in which nucleation and domain movement are both important. Fringing field effects due to mesa-structured capacitors gives the excess capacitance satisfies an empirical correction formula of Δ C/C = L-0.36, particularly as the aspect ratio increases.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2006 AREP 2006 P IA52 |
| Subjects: | 03 - Mineral Sciences |
| Divisions: | 03 - Mineral Sciences |
| Journal or Publication Title: | Ferroelectrics |
| Volume: | 334 |
| Page Range: | pp. 285-298 |
| Identification Number: | https://doi.org/10.1080/00150190600696030 |
| Depositing User: | Sarah Humbert |
| Date Deposited: | 16 Feb 2009 13:02 |
| Last Modified: | 23 Jul 2013 10:07 |
| URI: | http://eprints.esc.cam.ac.uk/id/eprint/443 |
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