Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Zhang, Xiang and Jin, Zehua and Wang, Luqing and Hachtel, Jordan A. and Villarreal, Eduardo and Wang, Zixing and Ha, Teresa and Nakanishi, Yusuke and Tiwary, Chandra Sekhar and Lai, Jiawei and Dong, Liangliang and Yang, Jihui and Vajtai, Robert and Ringe, Emilie and Idrobo, Juan Carlos and Yakobson, Boris I. and Lou, Jun and Gambin, Vincent and Koltun, Rachel and Ajayan, Pulickel M. (2019) Low Contact Barrier in 2H/1T′ MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition. ACS Applied Materials & Interfaces, 11 (13). pp. 12777-12785. ISSN 1944-8244 DOI https://doi.org/10.1021/acsami.9b00306

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Official URL: https://doi.org/10.1021/acsami.9b00306

Abstract

Metal–semiconductor contact has been a critical topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. In this study, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe2) planarly contacted by its metallic phase (1T′ MoTe2). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe2 films, including pure 2H phase or 1T′ phase, and 2H/1T′ in-plane heterostructure. Theoretical simulation shows a lower Schottky barrier in 2H/1T′ junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

Item Type: Article
Uncontrolled Keywords: 2019AREP; IA75
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
08 - Green Open Access
Journal or Publication Title: ACS Applied Materials & Interfaces
Volume: 11
Page Range: pp. 12777-12785
Identification Number: https://doi.org/10.1021/acsami.9b00306
Depositing User: Sarah Humbert
Date Deposited: 28 Jun 2019 10:33
Last Modified: 28 Jun 2019 10:33
URI: http://eprints.esc.cam.ac.uk/id/eprint/4484

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