A comparison of Magnetic Random Access Memories (MRAMs) and Ferroelectric Random Access Memories (FRAMs)

Scott, J. F. (2006) A comparison of Magnetic Random Access Memories (MRAMs) and Ferroelectric Random Access Memories (FRAMs). In: Ferro- and antiferroelectricity. Structure and Bonding, 124 . Springer, Berlin, pp. 199-207. ISBN 9783540496021 ISSN 0081-5993 (Print) 1616-8550 (Online)

Full text not available from this repository.

Abstract

short review is given of the status of MRAMs and FRAMs, summarizing both industry prototype production and university research. This comparison seems especially timely since this month (July 2006) Freescale have announced the first commercial MRAM product (4 Mb), and the race is now fairly even between the Samsung 32 Mb lead zirconate titanate FRAM and the Matsushita 4 Mb strontium bismuth tantalate FRAM.

Item Type: Book Section
Uncontrolled Keywords: 2007 AREP IA54 2007 P
Subjects: 03 - Mineral Sciences
Divisions: 03 - Mineral Sciences
Volume: 124
Page Range: pp. 199-207
Identification Number: 10.1007/978-3-540-49604-5
Depositing User: Sarah Humbert
Date Deposited: 16 Feb 2009 13:01
Last Modified: 23 Jul 2013 10:01
URI: http://eprints.esc.cam.ac.uk/id/eprint/54

Actions (login required)

View Item View Item

About cookies