Scott, J. F. (2006) A comparison of Magnetic Random Access Memories (MRAMs) and Ferroelectric Random Access Memories (FRAMs). In: Ferro- and antiferroelectricity. Structure and Bonding, 124 . Springer, Berlin, pp. 199-207. ISBN 9783540496021 ISSN 0081-5993 (Print) 1616-8550 (Online)
Full text not available from this repository.Abstract
short review is given of the status of MRAMs and FRAMs, summarizing both industry prototype production and university research. This comparison seems especially timely since this month (July 2006) Freescale have announced the first commercial MRAM product (4 Mb), and the race is now fairly even between the Samsung 32 Mb lead zirconate titanate FRAM and the Matsushita 4 Mb strontium bismuth tantalate FRAM.
| Item Type: | Book Section |
|---|---|
| Uncontrolled Keywords: | 2007 AREP IA54 2007 P |
| Subjects: | 03 - Mineral Sciences |
| Divisions: | 03 - Mineral Sciences |
| Volume: | 124 |
| Page Range: | pp. 199-207 |
| Identification Number: | https://doi.org/10.1007/978-3-540-49604-5 |
| Depositing User: | Sarah Humbert |
| Date Deposited: | 16 Feb 2009 13:01 |
| Last Modified: | 23 Jul 2013 10:01 |
| URI: | http://eprints.esc.cam.ac.uk/id/eprint/54 |
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