Constant-phase-element (CPE) modeling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors (5 pages)

Morrison, F. D. and Jung, D. J. and Scott, J. F. (2007) Constant-phase-element (CPE) modeling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors (5 pages). Journal of Applied Physics, 101 (1). 094112. DOI 10.1063/1.2723194

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Abstract

Several commercial high density ferroelectric random access memory (FeRAM) devices utilize stacks of submicron lead zirconate-titanate (PZT) capacitors. The low-field electrical characteristics of these capacitors display a specific frequency dependence which is best represented by a constant phase element (CPE) in the equivalent circuit diagram. The microscopic origin of such CPEs in the general literature is still of some debate, often being attributed to fractal dimensionality of the capacitor, near-electrode gradients in the dielectric, fringing fields near the electrode perimeter or, more generally, a distribution of relaxation times. We discuss these possibilities.

Item Type:	Article
Additional Information:	Samsung; cml
Uncontrolled Keywords:	2007 AREP IA54 2007 P
Subjects:	03 - Mineral Sciences
Divisions:	03 - Mineral Sciences
Journal or Publication Title:	Journal of Applied Physics
Volume:	101
Page Range:	094112
Identification Number:	10.1063/1.2723194
Depositing User:	Sarah Humbert
Date Deposited:	16 Feb 2009 13:03
Last Modified:	23 Jul 2013 10:08
URI:	http://eprints.esc.cam.ac.uk/id/eprint/548

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