Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films

Rios, S. and Scott, J. F. and Lookman, A. and McAneney, J. and Bowman, R. M. and Gregg, J. M. (2006) Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films. Journal of Applied Physics, 99 (2). Art no. 024107. DOI 10.1063/1.2159554

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Abstract

Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50–1200 nm) and different strain conditions (on lanthanum strontium cobalt oxide La0.5Sr0.5CoO3 and strontium ruthenate SrRuO3 buffer layers) were made using pulsed laser deposition, and characterized by x-ray diffraction. The out-of-plane lattice parameter was followed as a function of temperature within the 100–300 K temperature interval. The phase sequence (cubic-tetragonal-orthorhombic-rhombohedral) known to exist in the bulk analog is shown to be strongly affected by both the stress conditions imposed by the buffer layer and the thickness of the BST film itself. Thus, no phase transition was found for the in-plane compressed BST films. On the stress-free BST films, on the contrary, more phase transitions were observed. It appeared that the complexity of structural phase transitions increased as the film thickness in this system was reduced.

Item Type:	Article
Additional Information:	024107
Uncontrolled Keywords:	2006 AREP 2006 P IA50
Subjects:	03 - Mineral Sciences
Divisions:	03 - Mineral Sciences
Journal or Publication Title:	Journal of Applied Physics
Volume:	99
Page Range:	Art no. 024107
Identification Number:	10.1063/1.2159554
Depositing User:	Sarah Humbert
Date Deposited:	16 Feb 2009 13:03
Last Modified:	23 Jul 2013 10:08
URI:	http://eprints.esc.cam.ac.uk/id/eprint/631

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