Rios, S. and Scott, J. F. and Lookman, A. and McAneney, J. and Bowman, R. M. and Gregg, J. M. (2006) Phase transitions in epitaxial Ba0.5Sr0.5TiO3 thin films. Journal of Applied Physics, 99 (2). Art no. 024107. DOI https://doi.org/10.1063/1.2159554
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Abstract
Ba0.5Sr0.5TiO3 (BST) thin-film capacitor structures with various thicknesses, (50–1200 nm) and different strain conditions (on lanthanum strontium cobalt oxide La0.5Sr0.5CoO3 and strontium ruthenate SrRuO3 buffer layers) were made using pulsed laser deposition, and characterized by x-ray diffraction. The out-of-plane lattice parameter was followed as a function of temperature within the 100–300 K temperature interval. The phase sequence (cubic-tetragonal-orthorhombic-rhombohedral) known to exist in the bulk analog is shown to be strongly affected by both the stress conditions imposed by the buffer layer and the thickness of the BST film itself. Thus, no phase transition was found for the in-plane compressed BST films. On the stress-free BST films, on the contrary, more phase transitions were observed. It appeared that the complexity of structural phase transitions increased as the film thickness in this system was reduced.
Item Type: | Article |
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Additional Information: | 024107 |
Uncontrolled Keywords: | 2006 AREP 2006 P IA50 |
Subjects: | 03 - Mineral Sciences |
Divisions: | 03 - Mineral Sciences |
Journal or Publication Title: | Journal of Applied Physics |
Volume: | 99 |
Page Range: | Art no. 024107 |
Identification Number: | https://doi.org/10.1063/1.2159554 |
Depositing User: | Sarah Humbert |
Date Deposited: | 16 Feb 2009 13:03 |
Last Modified: | 23 Jul 2013 10:08 |
URI: | http://eprints.esc.cam.ac.uk/id/eprint/631 |
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