Scott, J. F. (2007) Data storage: Multiferroic memories. Nature Materials, 6 (4). pp. 256-257. DOI https://doi.org/10.1038/nmat1868
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Abstract
Multiferroics might hold the future for the ultimate memory device. The demonstration of a four-state resistive memory element in a tunnel junction with multiferroic barriers represents a major step in this direction.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | 2007 AREP IA54 2007 P |
| Subjects: | 03 - Mineral Sciences |
| Divisions: | 03 - Mineral Sciences |
| Journal or Publication Title: | Nature Materials |
| Volume: | 6 |
| Page Range: | pp. 256-257 |
| Identification Number: | https://doi.org/10.1038/nmat1868 |
| Depositing User: | Sarah Humbert |
| Date Deposited: | 16 Feb 2009 13:03 |
| Last Modified: | 23 Jul 2013 10:08 |
| URI: | http://eprints.esc.cam.ac.uk/id/eprint/668 |
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